The APPLAUSE project, which officially ended last year, continues to deliver impact with the latest article published Microelectronic Engineering, volume 286. “Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packaging”: can be found as Open Access article here: Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packaging – ScienceDirect.

Technical Highlights

  • Wafer-level low-temperature bonding using solid-liquid interdiffusion method.
  • Si and Borosilicate wafers with dissimilar thermomechanical properties have been successfully bonded.
  • The bonding process was carried out at temperatures as low as 170 °C.
  • The interconnection was composed of Cu/Cu6(Sn,In)5/Cu microstructure.
  • Cap-deflection measurements verify that the bonds are hermetic after the bonding and dicing processes.

Congratulations to Vesa Vuorinen, Obert Golim, Mervi Paulasto-Kröckel, Tobias Wernicke, Marta Pawlak, from partner organisations Aalto University and EVG.